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Ordering number : EN8039A
MCH6935
SANYO Semiconductors
DATA SHEET
MCH6935
Features
*
TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET
Power Management Switch Applications
*
Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature [Common Rating] Total Dissipation Storage Temperature PT Tstg Mounted on a ceramic board (600mm20.8mm) 0.55 --55 to +150 W C VDSS VGSS ID IDP PD Tch PW10s, duty cycle1% Mounted on a ceramic board (600mm20.8mm) 30 10 150 600 0.5 150 V V mA mA W C VCBO VCEO VEBO IC ICP PC Tj Mounted on a ceramic board (600mm20.8mm) -30 -30 --5 --700 --1.4 0.5 150 V V V mA A W C Symbol Conditions Ratings Unit
Marking : EY
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707 TI IM TC-00000561 / 12805EA TS IM TB-00001164 No.8039-1/6
MCH6935
Electrical Characteristics at Ta=25C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V 30 10 V A A V S 3.7 5.2 12.8 pF pF pF ns ns ns ns nC nC nC 1.2 V ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--30V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--10mA VCE=--10V, IC=--50mA VCB=--10V, f=1MHz IC=--200mA, IB=--10mA IC=--200mA, IB=--10mA IC=--10A, IE=0A IC=--1mA, RBE= IE=--10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 -5 35 125 25 200 520 4.7 --110 --0.9 --220 --1.2 --100 --100 500 MHz pF mV V V V V ns ns ns nA nA Symbol Conditions Ratings min typ max Unit
10
0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.3
Package Dimensions
unit : mm (typ) 7022A-017
Electrical Connection
6 0.25
2.0 0.15
5
4
6
5
4
0 to 0.02
1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain
Top view
2.1 1.6
0.25
1
0.65
2
3
0.3
1
2
3
0.85
1
2
3
1 : Source 2 : Gate 3 : Collector 4 : Emitter 5 : Base 6 : Drain SANYO : MCPH6
0.07
6
5
4
No.8039-2/6
MCH6935
Switching Time Test Circuit
PW=20s D.C.1% INPUT IB1 OUTPUT IB2
VIN VIN 4V 0V ID=80mA RL=187.5 VDD=15V
VR 50
RB + 220F + 470F
RL
D
PW=10s D.C.1%
VOUT
G
VBE=5V
VCC= --12V
P.G 50
MCH6935
S
IC=20IB1= --20IB2= --300mA
-mA 40mA
--700
IC -- VCE
0 --3 mA
[TR]
-20mA
--15m A
Collector Current, IC -- mA
--2
5mA
--800 --700 --600 --500 --400 --300 --200 --100
IC -- VBE
[TR]
VCE= --2V
--600
Collector Current, IC -- mA
--500
A --10m --7mA --5mA
--3mA --2mA
--400
--1mA
--200
--500A
--100 0 0
IB=0A
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05050
Collector-to-Emitter Voltage, VCE -- mV
1000 7 5
IT05049
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
--1000
[TR]
VCE(sat) -- IC
Ta=7 5C 25C --25C
--300
--50
[TR] IC / IB=20
VCE= --2V
Ta=75C 25C
--25C
3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
7 5 3 2
DC Current Gain, hFE
--100 7 5 3 2
100 7 5 3 --1.0
7 Ta=
5C
2
2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05051 --10 --1.0 2 3 5 7 --10 2
5C --2 5C
3 5 7 --100 2 3 5 7--1000 IT05054
Collector Current, IC -- mA
3 2
VCE(sat) -- IC
Collector Current, IC -- mA
3
[TR] IC / IB=50
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
[TR] IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
--1000 7 5 3 2 --100 7 5 3 2 --10 --1.0
--1.0 7 5
Ta= --25C
25C
C 75 Ta= 5C --2
75C
C 25
3
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05055
2 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5 7--1000 IT05056
No.8039-3/6
MCH6935
10
Cob -- VCB
[TR] f=1MHz
Gain-Bandwidth Product, f T -- MHz
1000
f T -- IC
[TR] VCE= --10V
Output Capacitance, Cob -- pF
7
7
5
5
3
2
3
2 --1.0
100 2 3 5 7 --10 2 3 5 IT05053 2 3 5 7 --10 2 3 5 7 --100 2 3 5
Collector-to-Base Voltage, VCB -- V
3 2
Collector Current, IC -- mA
0.6
7 --1000 IT05052
Ron -- IB
IN
[TR] OUT
Collector Dissipation, PC -- W
PC -- Ta
[TR]
f=1MHz
1k 1k
0.5
ON-Resistance, Ron --
10 7 5 3 2
M
IB
ou
nt
0.4
ed
on
ac
er
0.3
am
ic
bo
ar
d(
1.0 7 5 3 2 --0.1
0.2
60
0m
m2 0.8
0.1
m
m
)1
un
it
160
0 2 3 5 7 --1.0 2 3 5
Base Current, IB -- mA
0.16 0.14 0.12 0.10 0.08
7 --10 IT06403
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- C
0.30
IT06744
ID -- VDS
5V 2.
V
[FET]
ID -- VGS
VDS=10V
Ta= --25 C
[FET]
3.5V 4.0V
V 6.0
3.0
2.0
V
Drain Current, ID -- A
0.25
Drain Current, ID -- A
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.10
0.05
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030
Drain-to-Source Voltage, VDS -- V
10 9
IT00029
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
7
[FET] Ta=25C
RDS(on) -- ID
75
0.20
C
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
8 7 6
5
Ta=75C
3
80mA
5
25C --25C
ID=40mA
4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
2
1.0 0.01
2
3
5
7
0.1
2
25 C
[FET] VGS=4V
3
5 IT00032
Gate-to-Source Voltage, VGS -- V
IT00031
Drain Current, ID -- A
No.8039-4/6
MCH6935
10
RDS(on) -- ID
[FET] VGS=2.5V
3
RDS(on) -- ID
[FET] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5
Ta=75C 25C
Static Drain-to-Source On-State Resistance, RDS(on) --
2
10
3
--25C
Ta=75C
7 5
2
--25C
25C
3
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
2 0.001
2
3
5
7
0.01
2
3
5 IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Drain Current, ID -- A
7
[FET]
yfs -- ID
[FET] VDS=10V
Forward Transfer Admittance, yfs -- S
5
Static Drain-to-Source On-State Resistance, RDS(on) --
6
3 2
25C
5
4
3
, mA 0V =4. =40 ID GS A, V 80m I D=
=2. V GS
5V
Ta=
C --25
75C
0.1 7 5
2
1 --60
--40
--20
0
20
40
60
80
100
120
140
160
3 0.01
2
3
5
7
0.1
2
3
5 IT00036
Ambient Temperature, Ta -- C
5 3
IT00035
IS -- VSD
Drain Current, ID -- A
5 3
[FET] VGS=0V
SW Time -- ID
[FET] VDD=15V VGS=4V
Switching Time, SW Time -- ns
Source Current, IS -- A
2
2
td (off)
tf
75 C 25 C
0.1 7 5 3 2
100 7 5 3 2
Ta =
--25
C
tr
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
5 3 2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
10 9
[FET] f=1MHz
VGS -- Qg
[FET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=150mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
10 7 5 3 2
Ciss Coss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
No.8039-5/6
MCH6935
0.6
PD -- Ta
[FET]
0.6 0.55
PT -- Ta
M
[Common]
Allowable Power Dissipation, PD -- W
0.5
ou
Total Dissipation, PT -- W
M
0.5
ou
nt
nt
0.4
ed
ed
on
0.4
on
ac
ac
er
0.3
am
er
am
ic
bo
0.3
ic
ar
bo
d(
ar
d
0.2
60
(6
0m
m2
0.2
00
m
0.1
0.8
m2
m
0.
m
)1
0.1
8m
m
un
)
it
0 160 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT01118
Ambient Temperature, Ta -- C
IT07146
Note on usage : Since the MCH6935 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice.
PS No.8039-6/6

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